Power MOSFET (P-ch single)



Polarity P-ch
RoHS Compatible Product(s) (#) Available
Assembly bases Malaysia


Package Information

Package Image PS-8
Toshiba Package Name PS-8
Pins 8
Mounting Surface Mount

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain current ID -7.3 A
Drain power dissipation PD 1.68 W
Drain-Source voltage VDSS -20 V

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Total gate charge (Typ.) Qg - 33 nC
Drain-Source on-resistance (Max) RDS(ON) |VGS|=2.5V 0.03 Ω
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 0.018 Ω
Drain-Source on-resistance (Max) RDS(ON) |VGS|=2V 0.08 Ω


Application Note Construction and Characteristics: Power MOSFET Application Notes [Oct,2004] (PDF: 108KB)
Application Note Maximum Ratings: Power MOSFET Application Notes [Oct,2004] (PDF: 190KB)
Application Note Electrical Characteristics: Power MOSFET Application Notes [Oct,2004] (PDF: 181KB)
Application Note Application Precautions: Power MOSFET Application Notes [Oct,2004] (PDF: 302KB)
Application Note Heat Sink Design: Power MOSFET Application Notes [Oct,2004] (PDF: 237KB)
Catalog MOSFETs [Jun,2014] (PDF: 2822KB)


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(#) Under the RoHS Compatible Product(s) column, "Available" means at least one RoHS-Compatible product is available for sale in the corresponding product family. "None" means no RoHS Compatible product is available in that product family. For Toshiba's definitions of concepts related to the RoHS Directive and RoHS Compatibility, please click here.

The RoHS compatibility information provided herein is to the best of Toshiba's knowledge and belief accurate as of the date Toshiba entered the information into this database. Information is subject to change at any time without notice.

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