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Power MOSFET (N-ch 500V<VDSS≤700V)
|RoHS Compatible Product(s) (#)||Available|
|Toshiba Package Name||TO-220SIS|
Absolute Maximum Ratings
|Drain power dissipation||PD||30||W|
|Input capacitance (Typ.)||Ciss||-||380||pF|
|Total gate charge (Typ.)||Qg||-||9||nC|
|Drain-Source on-resistance (Max)||RDS(ON)|||VGS|=10V||2.45||Ω|
|Application Note||Construction and Characteristics: Power MOSFET Application Notes [Oct,2004]||(PDF: 108KB)|
|Application Note||Maximum Ratings: Power MOSFET Application Notes [Oct,2004]||(PDF: 190KB)|
|Application Note||Electrical Characteristics: Power MOSFET Application Notes [Oct,2004]||(PDF: 181KB)|
|Application Note||Application Precautions: Power MOSFET Application Notes [Oct,2004]||(PDF: 302KB)|
|Application Note||Heat Sink Design: Power MOSFET Application Notes [Oct,2004]||(PDF: 237KB)|
|Catalog||MOSFETs [Jun,2014]||(PDF: 2822KB)|
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