Power MOSFET (N-ch 500V<VDSS≤700V)



Polarity N-ch
RoHS Compatible Product(s) (#) Available
Assembly bases Japan


Package Information

Package Image TO-3P(N)
Toshiba Package Name TO-3P(N)
Pins 3
Mounting Through Hole

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain current ID 38.8 A
Drain power dissipation PD 270 W
Drain-Source voltage VDSS 600 V

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Input capacitance (Typ.) Ciss - 4100 pF
Total gate charge (Typ.) Qg - 135 nC
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 0.074 Ω


Application Note Construction and Characteristics: Power MOSFET Application Notes [Oct,2004] (PDF: 108KB)
Application Note Maximum Ratings: Power MOSFET Application Notes [Oct,2004] (PDF: 190KB)
Application Note Electrical Characteristics: Power MOSFET Application Notes [Oct,2004] (PDF: 181KB)
Application Note Application Precautions: Power MOSFET Application Notes [Oct,2004] (PDF: 302KB)
Application Note Heat Sink Design: Power MOSFET Application Notes [Oct,2004] (PDF: 237KB)
Catalog MOSFETs [Jun,2014] (PDF: 2822KB)

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(#) Under the RoHS Compatible Product(s) column, "Available" means at least one RoHS-Compatible product is available for sale in the corresponding product family. "None" means no RoHS Compatible product is available in that product family. For Toshiba's definitions of concepts related to the RoHS Directive and RoHS Compatibility, please click here.

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