Transistors Topics

Product information of Transistors on two years in the past.

N-channel Low ON-Resistance MOSFET Series (20V Products): TPCC8093, TPCP8206: We have newly added 20V products to our low ON-resistance, N-channel MOSFET series, which uses a seventh generation process for mobile phone power management switches and lithium-ion battery protection circuits. ( 28 Nov, 2011 )
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A discrete product recommended for wireless power transfer applications: MOSFET / SBD: We have developed discrete products recommended for wireless power transfer applications. ( 31 Oct, 2011 )
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Low RON P-channel MOSFETs for Power Management: SSM6J414TU: This product uses the latest UMOS VI process, which is suitable for charging and discharging switches for mobile devices and load switches for digital home appliances and office automation (OA) equipment, and is mounted in a 2.1mm x 2.0mm x 0.7mm (UF6) package. ( 31 Oct, 2011 )
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8th Generation Trench MOSFET Series for Synchronous Rectification: TK65A10N1, TK65E10N1, TK40E10N1, TK40A10N1: This is a high-efficiency MOSFET series developed for the secondary synchronous rectification of power supplies that are used for various applications such as notebook PC adaptors, game consoles, servers, desktop PCs, and flat panel displays. ( 28 Oct, 2011 )
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On-vehicle N-channel Power MOSFETs in a TO-220SM(W) Package: TK80F04K3L, TK80F06K3L, TK55F08K3L: Following the existing product lineup for high currents, we have additionally developed three middle current rating N-channel power MOSFET products. ( 19 Oct, 2011 )
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N-ch Semi-Power MOSFET: SSM3K335R: We have released a 4.5 V drive N-ch MOSFET mounted on an SOT-23F package. This N-ch MOSFET uses the latest process, which is suitable for DC-DC converters, and achieves faster switching than our popular SSM3K14T. ( 30 Sep, 2011 )
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New On-vehicle DPAK+ Package and Power MOSFET (Nch/Pch): TK, TJ Series: We have developed a New PW-Mold compatible high-voltage DPAK+ series, suitable for on-vehicle pump-body motor drives. ( 26 Sep, 2011 )
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300V System π-MOS VII Generation MOSFETs: TK18A30D, TK50J30D: We have added to the 200 V and 250 V lineup our new 300 V system VII generation power MOSFET products, primarily for primary switching power supplies. ( 21 Jul, 2011 )
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VII-H MOSBD Series Low Withstand Voltage Power MOSFET UMOS with Built-in Schottky Barrier Diode: TPCA8A10-H: We have developed a power MOSFET with a built-in Schottky barrier diode, which uses the UMOS VII-H process and is suitable for use in synchronous rectification DC-DC converters for devices such as Notebook PCs and digital home appliances. ( 21 Jul, 2011 )
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200V System π-MOS VII Generation MOSFETs: TK9A20DA, TK15A20D, TK20A20D, TK25A20D, TK40J20D, TK70J20D: We have created a new lineup of 200V system VII generation power MOSFET products, primarily for primary switching power supplies. ( 28 Jun, 2011 )
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UMOS VII-H MOSBD Series Low Withstand Voltage Power MOSFET with Built-in Schottky Barrier Diode: TPCA8A09-H, TPCA8A11-H: We have developed a power MOSFET with a built-in Schottky barrier diode, which uses the UMOS VII-H process and is suitable for use in synchronous rectification DC-DC converters for devices such as Notebook PCs and digital home appliances. ( 27 Jun, 2011 )
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P-ch Semi-Power MOSFET for Notebook PCs: SSM3J331R: We have expanded our lineup of SOT-23 class P-ch MOSFETs for notebook PCs with the new addition of the SSM3J331R. ( 24 Jun, 2011 )
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P-ch Semi-Power MOSFET for Mobile Phones: SSM6J212/213/215FE: We have added the SSM6J215FE to our lineup of 1.5V drive P-ch MOSFETs. With a lineup using a small 1.6mm x 1.6mm (SOT-563) package, we can meet low-voltage operation and high-density packaging requirements in smart phones and game consoles. ( 24 Jun, 2011 )
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Low Withstand Voltage Power MOSFET UMOS VII-H Series: TPC8055/56/57/58/59-H: We have developed a power MOSFET, which uses the UMOS VII-H process and is suitable for use in synchronous rectification DC-DC converters for devices such as laptop PCs and digital home appliances. ( 30 May, 2011 )
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TO-3P(N)IS Package IGBT for PFC (with partial switching): GT40J121, GT40J325: We will start the mass production of GT40J121/GT40J325, which are IGBTs for PFC (with partial switching) for use in air conditioners and in other applications. ( 29 Mar, 2011 )
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Low Withstand Voltage Power MOSFET UMOS VII-H Series: TPCC8065/66/67-H, TPC8064/65/66/67-H, TPC8223/24-H: We have developed a power MOSFET, which uses the UMOS VII-H process and is suitable for use in synchronous rectification DC-DC converters for devices such as laptop PCs and digital home appliances. ( 24 Mar, 2011 )
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250V System π-MOS VII Generation MOSFETs: TK8A25DA, TK8P25DA, TK13A25D, TK13P25D, TK20A25D, TK30J25D, TK60J25D: We have created a new lineup of 200 to 300V system VII generation power MOSFET products, primarily for primary switching power supplies. ( 24 Feb, 2011 )
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NPN Bipolar Transistor for Ultra High-speed Switching: TPCP8511: The NPN bipolar transistor for ultra high-speed switching is now in a PS-8 package. We have achieved higher power dissipation and a smaller and thinner package than that of Pw-Mini (SC-62) and TSM (SC-59) with this product. ( 07 Feb, 2011 )
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P-ch Semi-power MOSFETs for Mobile Devices: SSM3J133TU, SSM3J134TU, SSM3J135TU: We have released three P-ch semi-power MOSFETs for mobile devices mounted on UFM packages. These MOSFETs meet customer needs because of their variety of ON-resistance options. ( 28 Jan, 2011 )
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60 to 100 voltage MOSFETs for Secondary Synchronous Rectification of AC-DC Power: TK25E06K3, TK50E06K3A, TK50E08K3, TK60E08K3, TK18E10K3, TK40E10K3: We have added six new models mounted on a standard TO-220 package to the lineup of 60 to 100 voltage MOSFETs, in which a 4th-generation process achieved by using trench technology is used for the secondary synchronous rectification circuit of AC-DC power supplies. ( 18 Jan, 2011 )
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P-ch Dual MOSFETs Using Small 2-mm LGA Packagefor Mobile Device Charger Circuits MOSFET: SSM6P47NU, SSM6P49NU: We have developed P-ch MOSFETs (2-in-1 products) which adopt a next generation process in the UDFN6 2-mm package. These products are suitable for the charger circuits of mobile devices. ( 27 Dec, 2010 )
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N-ch Semi-Power MOSFET: SSM3K333R: We have released a new 4.5 V drive product, the SSM3K333R, for notebook PCs and DSCs. This MOSFET employs the latest N-channel 7th generation process, is mounted on the SOT-23F package, which offers good radiation performance, and features low ON-resistance. ( 27 Dec, 2010 )
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MOSFETs in a DPAK Package for Lighting Applications: Medium-voltage power MOSFETs in a DPAK package are commonly used for lighting inverter applications. Toshiba has expanded its product portfolio by introducing the π-MOS Series. ( 01 Dec, 2010 )
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Automatic Strobe Light Controlling IGBT for Serial Connection using the TSON-8 Package: GT8G151: We will start the mass production of GT8G151, which is an IGBT for controlling strobe lights. This product has a current rating of 150 A, which is the highest level for the TSON-8 small surface mount package. ( 22 Nov, 2010 )
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Semi-power P-ch MOSFETs for Quickly Charging Mobile Phones, Digital Still Cameras, and Game Consoles: We have developed an array of P-ch MOSFETs which adopt a next generation process. These MOSFETs meet customer demand with a variety of voltages, currents, and ON-resistance options and with a broad package lineup. ( 08 Nov, 2010 )
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NPN Bipolar Transistors for AC Adaptors and DC-DC Converters: TTC008, TTC012: We have developed NPN bipolar transistors for AC adaptors and DC-DC converters. The product lineup includes the TTC008 (for AC100 V power supply) and the TTC012 (for AC200 V power supply), which have a higher current rating than our well received products for the same purpose, the 2SC6010 (for AC100 V power supply) and the 2SC6042 (for AC200 V power supply). ( 28 Oct, 2010 )
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NPN Bipolar Transistor for Power Switching: TTC009: We have developed the TTC009 (VCEO: 80 V; IC: 3 A; Package: TO-220NIS) as a power switching transistor. With its low collector-emitter saturation voltage and high-speed switching characteristics, this product is suitable for switching circuit applications, such as DC/DC converter circuitry. ( 28 Oct, 2010 )
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Nch Standard MOSFET for Mobile Devices: SSM3K37MFV, SSM3K37FS, SSM3K37CT, SSM6N37FU, SSM6N37FE, SSM6N37CTD: We have released the SSM3K37, a new generation of SSM3K16 series for standard switches used in mobile devices. ON-resistance is lower than for existing products. There is a broad package lineup with single and dual types to meet customers’ various needs. ( 28 Oct, 2010 )
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Pch + SBD MOSFET for Chinese Mobile Phones (UDFN6): SSM6G18NU: We have developed a new 2 mm LGA package (UDFN6) and, as its first model, released a complex device consisting of a low Ron MOSFET and a low VF Schottky barrier diode. ( 28 Oct, 2010 )
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Latest-Generation N-channel Low ON-Resistance MOSFET Series: This is a low ON-resistance, N-channel MOSFET series using the seventh (latest) generation process for mobile phone power management switches and lithium-ion battery protection circuits. This series can contribute to size and thickness reduction, and high efficiency of devices. ( 05 Oct, 2010 )
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Bipolar Transistors for LED Backlighting: TTC011, TTC013: We have added two models to the lineup of high-voltage bipolar transistors, which are suitable for backlighting: the TTC011, a self-contained bipolar transistor which can be installed onto a heatsink, and the TTC013, a surface-mount type bipolar transistor which is suitable for downsizing and higher densities. ( 05 Oct, 2010 )
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P-ch Semi-Power MOSFET: SSM3J334R: We have released a new product SSM3J334R for notebook PCs and DSCs. This product is a new generation of our popular SSM3J14T for mobile devices. An ON-resistance and capacitance lower than existing products have been achieved through high-speed switching. Please consider using this product when a P-ch semi-power MOSFET is needed. ( 30 Sep, 2010 )
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N-ch Standard MOSFET: SSM3K15A, SSM6N15A series: We have released the SSM3K15A, a low ON-resistance version of our popular SSM3K15 series for standard switches used in mobile devices. A broad package lineup comes in single and dual types to meet customers’ various demands. ( 15 Sep, 2010 )
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U-MOSIV Generation N-channel Power MOSFETs in a TFP Package: TK70X04K3Z, TK80X04K3L: We have developed U-MOSIV generation N-channel power MOSFETs packaged in the TFP type envelope for use in on-vehicle motor drivers and switching regulators. These products can be used for highcurrent applications such as EPSs. ( 31 Aug, 2010 )
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U-MOSIV Generation N-channel Power MOSFETs in a TO-220SIS or TO-3P(N) Package: TK50A04K3, TK70J04K3Z, TK70J06K3, TK75J04K3Z: We have developed N-channel power MOSFETs packaged in a lead type TO-220SIS or TO-3P(N) envelope for use in on-vehicle motor drivers and switching regulators. These products can be used for highcurrent applications such as EPSs. ( 31 Aug, 2010 )
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U-MOSIV Generation N-channel Power MOSFETs in TO-220SM(W) Package: TK100F04K3L, TK150F04K3L: We have developed U-MOSIV generation N-channel power MOSFETs packaged in the TO-220SM(W) type envelope for use in on-vehicle motor drivers and switching regulators. These products can be used for high-current applications such as EPSs. ( 31 Aug, 2010 )
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900V System π-MOS IV Generation MOSFETs: TK1Q90A, TK1P90A: We have added a new lineup of 900 V system power MOSFETs for use with chargers and lighting systems, mounted on a small package with an integrated 4th generation chip. ( 27 Aug, 2010 )
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30 V System, Low ON-resistance, Latest Generation P-channel MOSFET Series: TPCC8105, TPCC8104, TPCA8128, TPCA8120: This is a low-voltage, low ON-resistance, P-channel MOSFET series using the latest generation process that realizes high efficiency, smaller size, and thinner packages for notebook PCs and mobile phone power management switches and also for lithium-ion battery protection circuits. The TPCC8105 and TPCC8104 for the TSON Advance package, and TPCA8120 and TPCA8128 for the SOP Advance package have been also been released. ( 14 Jul, 2010 )
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Power MOSFET UMOS VI-H Series: TPC8061-H: We have developed using the UMOS VI-H process a power MOSFET which is suitable for use in synchronous rectification DC-DC converters for devices such as notebook PCs and digital home appliances. ( 14 Jul, 2010 )
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PNP Bipolar Transistor for Amplifying On-Vehicle Low Frequency Power: TTB001, TTB002: We have developed a bipolar transistor with an absolute maximum junction temperature of 175 deg. C for use in on-vehicle products (see AEC Q-101). ECUs and some other units used in vehicles include bipolar transistors, which are used for droppers for the purpose of ripple rejection. There are two product lineups which have an absolute maximum junction temperature of 175 deg. C, which meet the exact requirements for on-vehicle environments. ( 12 Jul, 2010 )
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A General Purpose PNP Bipolar Transistor with a -50 V Withstand Voltage and a -1 A Collector Current: TTA007: Our popular transistor, a PNP transistor with a -50 V withstand voltage and a -1 A collector current, is now in a TSM package. The product lineup also includes a complementary NPN transistor TTC007. ( 12 Jul, 2010 )
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IGBT for Serially Connected Automatic Strobe Light Controller using the TSON-8 Package: GT5G133: We have started the mass production of GT5G133, which is an IGBT for controlling strobe lights. It supports a 3 V power supply and can control a 130 A current using a 2.5 V gate driving voltage. The package used is TSON-8, a small surface mount package. The mount area of TSON-8 is 52% of that of the conventional package, TSSOP-8, so reducing board footprint. ( 12 Jul, 2010 )
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Pch 1.5V Drive Semi-Power MOSFET: SSM3J327R, SSM3J328R: Some semi-power products using SOT-23F, a new package, have been released for portable devices such as notebook PCs and DSCs (digital still cameras). ( 12 Jul, 2010 )
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A General Purpose NPN Bipolar Transistor with a 50 V Withstand Voltage and a 1 A Collector Current: TTC007: Our popular transistor, an NPN transistor with a 50 V withstand voltage and a 1 A collector current, is now in a TSM package. The product lineup also includes a complementary PNP transistor TTA007. ( 12 Jul, 2010 )
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Latest-Generation P-channel Power MOSFET with Low On-Resistance: TPC6113: We have released an additional low-voltage and low ON-resistance P-channel MOSFET product based on a latest-generation process technology that allows them to be made more efficient, smaller and thinner for use in power management switches for laptop PCs and mobile devices as well as in lithium-ion battery protection circuits. ( 12 Jul, 2010 )
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Complementary MOSFET: TPCP8405, TPCP8406: Nch and Pch MOSFETs are mounted on a small PS-8 package for use with small-power motor drives or inverters in a bridge circuit configuration. ( 15 Jun, 2010 )
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MOSFET D-PAK Series for Lighting: A new package (D-PAK) has been added to the π-MOS VII series, which comprises MOSFETs for high-speed switching, to allow users to realize design optimization thanks to a broad product lineup. ( 10 Jun, 2010 )
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Nch-MOSFET for lithium-ion battery protection circuits: SSM3K329R: The battery pack for notebook PCs has a built-in protection circuit which detects abnormalities and cuts out installed fuses before such abnormalities may lead to a worst case scenario. We have released an Nch semi-power MOSFET to cut out fuses in such cases. ( 10 Jun, 2010 )
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The 4th Generation N-Channel Low ON-Resistance MOSFET Series: TPC6012, TPCF8003, TPCC8007: To meet the needs for the improvement of the operational efficiency of notebook PCs and portable equipment, we have also released the power MOSFET N-ch U-MOS IV series, whose products' ON-resistance has been reduced by 25% compared to the existing U-MOS III series. ( 12 May, 2010 )
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The Latest Generation P-Channel Low ON-Resistance MOSFET Series: TPCF8105, TPCP8305, TPC8126, TPC8127, TPC8128: For power management switches and also for lithium-ion battery pack protection circuits for notebook PCs and mobile phones, we have released additional low-voltage and low ON-resistance P-channel MOSFET products using the latest generation process that realizes high efficiency, and size and thickness reduction. ( 11 May, 2010 )
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Semi-Power P-ch MOSFET: SSM6J212FE: We have released the 1616 size (SOT-563) semi-power MOSFET SSM6J212FE to be used in portable devices, the size reduction of which has been greatly demanded. ( 30 Mar, 2010 )
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2 mm x 2 mm LGA Package (UDFN6): Release of Small-Signal MOSFET Products: we have developed Small-Signal MOSFET Products in 2 mm x 2 mm LGA package. They are suitable for use as switches in, for example, mobile terminals where high-density packaging is required. ( 25 Mar, 2010 )
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General-Purpose N-channel MOSFET Switches: SSM3K37MFV, SSM6N37FE: Toshiba has released the low-RON 1-in-1 SSM3K37MFV and 2-in-1 SSM6N37FE N-channel MOSFET devices, which are intended as replacements for the SSM3K16FV and SSM6N16FE that are popular as MOSFET switches for mobile applications. ( 25 Mar, 2010 )
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Semi-Power P-Channel MOSFET: SSM3J325F: Toshiba has released a low-RON P-channel MOSFET device in the SOT-346 package measuring 2.9 x 2.5 x 1.1 mm, which is fabricated using a new process. The new device is ideal for use as a power management switch in notebook PCs. ( 11 Mar, 2010 )
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N-Channel MOSFET for Muting Applications: SSM6N42FE: Toshiba has now released a MOSFET that exhibits lower On-resistance than that of its predecessors. Apart from the conventional use of its predecessors, the SSM6N42FE can also be used for cell-phone muting. ( 11 Mar, 2010 )
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Latest-Generation P-channel Power MOSFETs with Low On-Resistance: TPC6110, TPC8124: Toshiba has developed P-channel MOSFETs with low on-resistance based on the latest-generation process. ( 10 Mar, 2010 )
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Semi-Power P-Channel MOSFET: SSM3J327F: Toshiba has developed the SSM3J327F, a P-channel power switching device of 125 mΩ max @ V_GS = -2.5 V housed in a general-purpose SOT-346 (S-Mini) package (2.9 x 2.5 x 1.1 mm). ( 08 Feb, 2010 )
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