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Semi-Power P-Channel MOSFET: SSM3J327F

Many devices used in medium-size mobile equipment such as notebook PCs tend to be housed in a 3-mm2 small package. Besides, P-channel MOSFETs with Low ON-resistance of 130 mΩ max @ VGS = -2.5 V are commonly used. To satisfy these both needs, Toshiba has developed the SSM3J327F, a P-channel power switching device of 125 mΩ max @ VGS = -2.5 V housed in a general-purpose SOT-346 (S-Mini) package of about 3-mm2 (2.9 × 2.5 × 1.1 mm).
The SSM3J327F is best suited for power management switches in notebook PCs.

The product photograph of Semi-Power P-Channel MOSFET: SSM3J327F.

Features

Application Example

Power management switch of laptop PCs
The illustration of Application Example of Semi-Power P-Channel MOSFET: SSM3J327F.

Package Details

Label
The illustration of Label of Semi-Power P-Channel MOSFET: SSM3J327F.
Internal Configuration
The illustration of Internal Configuration of Semi-Power P-Channel MOSFET: SSM3J327F.
Package Dimensions
The illustration of Package Dimensions of Semi-Power P-Channel MOSFET: SSM3J327F.

Main Characteristics

Main Characteristics of Semi-Power P-Channel MOSFET: SSM3J327F
Part Number Polarity Package VDSS
(V)
VGSS
(V)
ID
(A)
RON(max) (mΩ) Ciss
(pF)
Name Size VGS=
-1.5V
VGS=
-1.8V
VGS=
-2.5V
VGS=
-4.5V
SSM3J327F P-channel S-Mini 2925 -20 ±8 -3.5 242 170 125 95 290

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