UMOS V-H Power MOSFET Series TPCA8A02-H and TPC8A03-H MOSBDs
CPUs and image processors are used in various information and communication systems, including communication base stations. These devices are moving towards increasingly lower voltages and higher currents. At the same time, DC-DC converters, which drive these devices, are increasingly required to offer improved power efficiency and reduced size.
The new devices, TPCA8A02-H and TPC8A03-H, integrate a low-side MOSFET for a synchronous DC-DC converter and a Schottly Barrier Diode(SBD) onto a single die using a monolithic structure to eliminate the need of an external SBD and reduce wiring inductance between the MOSFET and the SBD. This structure helps reduce the power dissipation during dead times.
Features
- Compact size
- Integrates a low-side MOSFET and a SBD onto a single die.
- Operating range
- Guaranteed operation at a channel temperature of up to 150°C.
- Guaranteed avalanche protection.
- High efficiency
- MOSFETs are fabricated using UMOS V-H process technology.
- Integrating a MOSFET and a SBD using a monolithic structure reduces a parasitic inductance and improves the power efficiency of the SBD.
→Reduces power dissipation during dead times.
Package Details
- SOP-8
-
- SOP Advance
-
Efficiency Characteristics Comparison
- The TPCA8012-H is a standard FET of the same ratings and generation as the TPCA8A02-H, but does not incorporate an internal SBD.
Product Offerings
| Part Number | Absolute Maximum Ratings | RDS(ON) (mΩ) @VGS= 4.5V |
Qg(nC) | VDSF(V) @VGS= 0V |
IDSS(μA) @VDS= 30V |
Package | ||
|---|---|---|---|---|---|---|---|---|
| VDSS(V) | ID(A) | Typ. | Max | Typ. | Max | Max | ||
| TPCA8A02-H | 30 | 34 | 4.8 | 6.7 | 19 | -0.6 | 100 | SOP Advance |
| TPC8A03-H | 30 | 16 | 5.1 | 7.0 | 19 | -0.6 | 100 | SOP-8 |