Power MOSFETs TK40D10J1 and TK40A10J1 for Synchronous Rectification
More and more high-output-current switching power supplies and AC adapters are moving to synchronous rectification to reduce product size and improve power efficiency. Power MOSFET characteristics required for synchronous rectification include low ON-resistance, low gate capacitance, high breakdown voltage, high power dissipation and low Cgd/Cgs ratio. In addition to the ultra-high-speed U-MOS Ⅲ Series that meets all these requirements, Toshiba has released new devices with a current rating of 40 A.
Features
- Simplified trade-offs between ON-resistance and gate charge
- The U-MOS Ⅲ Series uses trench cell structure MOSFET technology to combine fast switching speed and low ON-ressistance. The new devices have a gate-charge-vs-ON-resistance trade-off curve approximately 50% lower than their predecessors. Housed in the TO-220 package, the new devices are suitable for use in the secondary side of a synchronous rectification circuit in switching power supplies.
- • ON-resistance: RDS(ON) = 11.5mΩ typ./15mΩ max. @TK40D10J1,
VGS= 10V，ID=20A，Tc=25°C - • Gate charge: Qg= 76nC typ./ Qsw= 24nC typ. @TK40D10J1,
VDS= 80V，VGS= 10V，ID= 40A，Tc= 25°C - High breakdown voltage
- • Guaranteed avalanche protection
- • Integral Zener diode for gate-to-source ESD protection
- Characteristics Comparisons with Previous Devices
- At the same ON-resistance, the new devices have a total gate charge (Qg) approximately 50% lower than the previous devices. This gives the new devices a superior trade-off characteristics in gate charge and ON-resistance.
Package Details
Application Circuit Example
The TK40D10J1 and TK40A10J1 can be used on the secondary side of a synchronous rectification circuit in various types of switching power supplies and AC adapters.
Product Offerings
Power MOSFETs with VDSS = 60 V to 100 V are offered.
| Part Number | Absolute Maximum Ratings |
RDS(ON) (mΩ) @VGD=10V |
Qg (nC) typ. |
Qsw (nC) typ. |
Package | |||
|---|---|---|---|---|---|---|---|---|
| VDSS (V) | ID (A) | PD (W) | typ. | max | VDS=VDSS*0.8 ID=ID(DC) |
|||
| TK70D06J1 | 60 | 70 | 140 | 5.1 | 6.4 | 87 | 30 | TO-220(W) |
| TK70A06J1 | 45 | TO-220SIS | ||||||
| TK60D08J1 | 75 | 60 | 140 | 6.2 | 7.8 | 86 | 27 | TO-220(W) |
| TK60A08J1 | 45 | TO-220SIS | ||||||
| TK55D10J1 | 100 | 55 | 140 | 8.4 | 10.5 | 110 | 38 | TO-220(W) |
| TK55A10J1 | 45 | TO-220SIS | ||||||
| TK40D10J1 | 100 | 40 | 100 | 11.5 | 15 | 44 | 24 | TO-220(W) |
| TK40A10J1 | 40 | TO-220SIS | ||||||
- Note: Part Naming Conventions
