CMOS Area Image Sensor
CMOS area image sensors are integrated circuits (ICs) that convert light into an electronic signal. They consist of a photodiode array and multiple CMOS transistors per pixel.
To meet market needs for smaller form factor and higher performance, Toshiba has developed CMOS area image sensors with a 1.4-μm pixel pitch, reduced from the conventional 2.2 μm. The new image sensors are available with a wide range of resolution from VGA to over 10 million pixels. Additionally, these image sensors provide high picture quality thanks to advanced CMOS sensor technologies such as micro-lens and photodiode optimizations. Toshiba's CMOS area image sensors will open up a new possibility for mobile devices like camera cell phones.
Applications
Toshiba offers an extensive portfolio of CMOS area image sensors suitable for various applications such as cell phones and digital cameras.
- VGA to over 10 million pixels
- Chip-scale camera modules (CSCMs)
- High-sensitivity backside illumination (BSI) image sensors
- Available in module, package and die forms.
Product Lineup and Roadmap
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3.7 µm | 1.75 µm | 1.4 µm | 1.1 µm (BSI) |
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|---|---|---|---|---|---|---|
| 1st Gen. | 1st Gen. (90 nm) |
2nd Gen. (65 nm) |
3rd Gen. (BSI) |
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| 2nd Gen. (Bright) |
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| 12 MP+ |  |
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| 8 MP |  |
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| 5 MP |  |
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| 3 MP |  |
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| 2 MP |  |
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| VGA |  |
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Technical Information
News Releases & Topics
News releases of Toshiba's Sensors products are posted.
- Toshiba Corporation launches highly sensitive CMOS image sensor with Back Side Illumination ( 07 Jul, 2011 )
Contacts
If you have any queries, click one of these links:
- Technical queries
- Queries about purchasing, sampling and IC reliability