Radio-Frequency MOSFETs
TOSHIBA radio-frequency MOSFETs are of dual gate type with 2 gate terminals (G). A radio-frequency signal is input to Gate 1 (G1) and a gain control voltage VG2 is applied to the other Gate 2 (G2).
Radio-Frequency Power MOSFETs
Developed for amplifying transmission power for VHF and UHF TV broadcasting equipment, and 800 MHz cell phones. It features high gain and high efficiency.
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