Radio-Frequency Devices Product Introduction
TOSHIBA radio-frequency devices range widely from small-signal diodes to power amplifier modules for power amplification. It also has a complete line-up of surface mounting parts responding to miniaturized higher-performance electronic devices.
Radio-Frequency MOSFETs
TOSHIBA radio-frequency MOSFETs are of dual gate type with 2 gate terminals (G). A radio-frequency signal is input to Gate 1 (G1) and a gain control voltage VG2 is applied to the other Gate 2 (G2).
Radio-Frequency Power MOSFETs
Developed for amplifying transmission power for VHF and UHF TV broadcasting equipment, and 800 MHz cell phones. It features high gain and high efficiency.
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Radio-Frequency Small-Signal FETs
Radio-Frequency Bipolar Transistors
- Radio-Frequency Bipolar Transistors
- Dual Radio-Frequency Bipolar Transistors
- Two transistors with different characteristics are mounted in a single package.
One can be used for VCO and the other for buffering. - SiGe HBT (Silicon Germanium-Heterojunction Bipolar Transistor)
- Radio-frequency characteristics have been improved by using SiGe compound for the base of the bipolar transistor.
- Radio-Frequency Bipolar Power Transistors
- There is a wide range of high-power transistors available, covering from HF band to VHF/UHF band. They are suitable for radio-frequency high-power amplifiers and boosters.
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Radio-Frequency Diodes
Variable Capacitance Diodes
These diodes have the capacities variable depending on the value of the reverse bias voltage applied between the anode and the cathode. They are also called VCDs (Variable Capacitance Diodes) or VariCaps. They are used in radio-frequency matching circuits for electronic tuning.
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Radio-Frequency Switching Diodes
They are particularly optimum for switching UHF/VHF frequency band of TV tuners.
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Radio-Frequency Schottky Barrier Diodes
- Schottky Barrier Diodes for Mixer
- Making use of rectifying property brought about by contact of a metal and a semiconductor, in place of P-N junction, these diodes are activated by a majority carrier. They are suitable for radio-frequency signal mixer circuits because the forward voltage is low and the reverse recovery time is short.
Small-Signal MMIC (Radio-Frequency Cell Pack)
This is a high-frequency IC which incorporates and integrates the circuits, such as an amplifier, mixer, etc., required for mobile communication into a small surface mounting package. With less external parts, it is capable of realizing low power consumption, miniaturization, and simplified design.
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