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RF Bipolar Transistors

Radio-Frequency Bipolar Transistors
Dual Radio-Frequency Bipolar Transistors
Two transistors with different characteristics are mounted in a single package.
One can be used for VCO and the other for buffering.
SiGe HBT (Silicon Germanium-Heterojunction Bipolar Transistor)
Radio-frequency characteristics have been improved by using SiGe compound for the base of the bipolar transistor.
Radio-Frequency Bipolar Power Transistors
There is a wide range of high-power transistors available, covering from HF band to VHF/UHF band. They are suitable for radio-frequency high-power amplifiers and boosters.

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