On July 1st, Toshiba Corporation's Semiconductor Company and Storage Products Company consolidated to form Semiconductor & Storage Products Company.This page describes reliability information of semiconductor products.
Failure Location Identification Using IR-OBIRCH
[As of April, 2011]
- Purpose
IR-OBIRCH identifies the failure location by scanning the sample surface using an infrared laser and then detecting any changes in resistance value caused by the laser. Compared with conventional methods such as the emission microscope, IR-OBIRCH offers higher detection sensitivity, enabling better identification of possible failure locations. IR-OBIRCH is not only effective in identifying the failure locations of shorts and electrical leakages, but also the failure locations of defects caused by high resistance. - Analysis
The via-chain open failure location was identified using IR-OBIRCH. - Result
The failure location was detected based on the IR-OBIRCH data. As a result of TEM analysis of a cross-section of the location, the cause of failure was identified as a void in the via area.
![This is [Figure 1 Example of Signal Detection By IR-OBIRCH].](/eng/product/reliability/device/analysis/analysis4/__icsFiles/artimage/2009/10/28/ec_relia5_54/E_04-017_z04-06_300.jpg "This is [Figure 1 Example of Signal Detection By IR-OBIRCH].")
Figure 1 Example of Signal Detection By IR-OBIRCH
![This is [Figure 2 Result of Examining the Cross-Section of the Detected Location (TEM)].](/eng/product/reliability/device/analysis/analysis4/__icsFiles/artimage/2009/10/28/ec_relia5_54/E_04-017_z04-07_450.jpg "This is [Figure 2 Result of Examining the Cross-Section of the Detected Location (TEM)].")
Figure 2 Result of Examining the Cross-Section of the Detected Location (TEM)
On July 1st, Toshiba Corporation's Semiconductor Company and Storage Products Company consolidated to form Semiconductor & Storage Products Company.This page describes reliability information of semiconductor products.