On July 1st, Toshiba Corporation's Semiconductor Company and Storage Products Company consolidated to form Semiconductor & Storage Products Company.This page describes reliability information of semiconductor products.

TEM Cross-Sectional Analysis of Failure Location Identified Using OBIC

[As of April, 2011]

Purpose
OBIC is a tool capable of measurement without bias, and is effective in the identification of failure locations such as leak locations of an initial product. In addition, with the advances in device miniaturization and film development, observation using a TEM is now required for accurately identifying the failure structure. Here, the minute structure of the failure location was identified using OBIC and observed using a TEM.
Analysis
The gate leak location was identified using OBIC, a TEM sample was prepared by FIB processing, and the sample was observed using a TEM. At this time, the FIB processing location was accurately established by marking the position using the FIB and repeating OBIC measurement.
Result
A defect in the gate oxide film was confirmed at the OBIC specified location. Poly-Si entered this area, resulting in a leak.

This is [Figure 1 OBIC Observation Image (FIB processing location established with high accuracy by FIB position marking)].

Figure 1 OBIC Observation Image
(FIB processing location established with high accuracy by FIB position marking)

This is [Figure 2 Cross-Sectional TEM Image of Location of Light Emission].

Figure 2 Cross-Sectional TEM Image of Location of Light Emission

This is [Figure 3 TEM Image (Enlarged): Gate oxide film defect identified. Poly-Si entered this location.].

Figure 3 TEM Image (Enlarged): Gate oxide film defect identified. Poly-Si entered this location.

Note: Bibliography. Suzuki, Tanaka, Yamauchi; "TEM Observation of Semiconductor Device Failure Location Cross-Section by High-Precision Processing Location Specification Method"; 29^th Symposium on Reliability and Maintainability, pp. 49-52, 1999