On July 1st, Toshiba Corporation's Semiconductor Company and Storage Products Company consolidated to form Semiconductor & Storage Products Company.This page describes reliability information of semiconductor products.

Coupling Status Analysis of Minute Part Using XPS

[As of April, 2011]

Purpose
A junction failure between the densely integrated Cu-Sn pad and chip bumps occurred. It has been found that the vaporated Au on junction failure was not diffused by heat treatment (Figure 1). The failure cause is examined by depth analysis based on Ar ion sputtering using XPS.
Analysis and Result
From Figure 2, it was found that the junction failure part has Sn oxide while the normal junction has Sn and Au being diffused. The Sn oxide prevents Sn and Au to diffuse on the junction failure part. It is found that the junction failure is caused by the generation of Sn oxide. It has been fed back to manufacturing process.

This is [Figure 1 Status after Heat Treatment Applied to Vaporated Au on the Cu-Sn Pad].

Figure 1 Status after Heat Treatment Applied to Vaporated Au on the Cu-Sn Pad

This is [Figure 2 Depth Profile Analysis on the Pad Using XPS].

Figure 2 Depth Profile Analysis on the Pad Using XPS