On July 1st, Toshiba Corporation's Semiconductor Company and Storage Products Company consolidated to form Semiconductor & Storage Products Company.This page describes reliability information of semiconductor products.

Junction Analysis Using SCM

[As of April, 2011]

Purpose
The status of the P/N junctions scattered in the substrate was observed by creating an image of the variation of capacitance using an SCM. ^Note This method is particularly effective in P/N assessment and local Xj and offset measurement.
Analysis
The structure of the cross-sectional diffusion of the CCD area sensor was observed using an SCM.
Result
The diffusion layer distribution of the CCD area sensor was observed. This analysis makes it possible to provide information for process development and defect analysis, based on the P/N assessment and positional relationship with upper layer metallization etc.

This is [Figure 1 CCD Area Sensor (Left: SCM Image, Right: AFM Image)].

Figure 1 CCD Area Sensor (Left: SCM Image, Right: AFM Image)

This is [Figure 2 Diffusion Layer Positional Relationship (SCM Image and AFM Image Combined)].

Figure 2 Diffusion Layer Positional Relationship (SCM Image and AFM Image Combined)

Note: Bibliography. Y. Takasaki, T. Yamamoto: Cross-section analysis of electric devices by scanning capacitance microscope: ESREF99, 1999