On July 1st, Toshiba Corporation's Semiconductor Company and Storage Products Company consolidated to form Semiconductor & Storage Products Company.This page describes reliability information of semiconductor products.
Analysis of Cause of Leakage between Metallization on Package Substrate
[As of April, 2011]
- Purpose
Failure due to electrical leakage occurred in FBGA package products. The leakage location was identified between Cu metallization on the substrate by removing the solder resist layer. Element analysis was performed at the location of failure using EMPA to investigate the cause. - Analysis
The Cu metallization layer was exposed by surface polishing and etching and element mapping was conducted using EPMA. - Result
Cl and Ni were detected at the failure location. Ni seeped out from the plated area due to Cl contamination, resulting in leakage.
![This is [Figure 1 Light Microscope Image of Failure Location].](/eng/product/reliability/device/analysis/analysis4/__icsFiles/artimage/2009/10/28/ec_relia5_54/E_04-029_z04-38_300.jpg "This is [Figure 1 Light Microscope Image of Failure Location].")
Figure 1 Light Microscope Image of Failure Location
![This is [Figure 2 EMPA Element Mapping Result (Cl and Ni Detection)].](/eng/product/reliability/device/analysis/analysis4/__icsFiles/artimage/2009/10/28/ec_relia5_54/E_04-029_z04-39_450.jpg "This is [Figure 2 EMPA Element Mapping Result (Cl and Ni Detection)].")
Figure 2 EMPA Element Mapping Result (Cl and Ni Detection)
On July 1st, Toshiba Corporation's Semiconductor Company and Storage Products Company consolidated to form Semiconductor & Storage Products Company.This page describes reliability information of semiconductor products.