Mini-Flat Phototransistor Coupler with Reinforced Isolation : TLP285
A new phototransistor coupler in the SOP4 mini-flat package, the TLP285 provides reinforced isolation compliant with international safety standards.
The high isolation voltage (3750 Vrms AC minimum) and the wide operating temperature range (Ta = -55 °C to 110 °C) make the TLP285 suitable for a variety of applications such as power supplies and hybrid ICs requiring high-density board assembly; home appliances; communications equipment; various controllers and so on.
Features
- SOP4 (mini-flat) package
- Certified for safety standard compliance
- UL-approved: UL1577 (file E67349)
- BSI-approved: BS EN 60065:2002, BS EN 60950-1:2006
- VDE-approved (The “V4” option should be designated.): EN60747-5-2
Maximum isolation voltage: 707 Vpk, Maximum overvoltage: 6000 Vpk
- Mechanical parameters
Creepage: 5.0 mm (min), Clearance: 5.0 mm (min), Thickness of isolation: 0.4 mm (min) - Operating temperature: -55 °C to 110 °C
- Isolation voltage: 3750 Vrms
- Collector-to-emitter voltage: 80 V (min)
Package Details
Applications
- Various power supplies
- Hybrid ICs
- Home appliances and communications equipment
- Various controllers
- Signal transmission systems between circuits with different voltages
Current Transfer Ratios
| Rank | Min | Max |
|---|---|---|
| - | 50 | 600 |
| Y | 50 | 150 |
| GR | 100 | 300 |
| GB | 100 | 600 |
| BL | 200 | 600 |
| YH * | 75 | 150 |
| GRL * | 100 | 200 |
| GRH * | 150 | 300 |
| BLL * | 200 | 400 |
- Current transfer ratio(%): IC/IF
- Conditions: IF = 5 mA, VCE = 5 V, Ta = 25 °C
- * : Contact your local Toshiba sales representative.
Main Characteritics
| Characteristics | Symbol | Test Conditions | Min | Typ. | Max | Unit | ||
|---|---|---|---|---|---|---|---|---|
| Operating temperature | Topr | - | -55 | - | 110 | °C | ||
| Storage temperature | Tstg | - | -55 | - | 125 | °C | ||
| LED | Forward voltage | VF | IF = 10 mA | 1.0 | 1.15 | 1.3 | V | |
| Reverse current | IR | VR = 5 V | - | - | 10 | µA | ||
| Capacitance | CT | V = 0 V, f = 1 MHz | - | 30 | - | pF | ||
| Detector | Collector-to-emitter breakdown voltage | V(BR)CEO | IC = 0.5 mA | 80 | - | - | V | |
| Emitter-to-collector breakdown voltage | V(BR)ECO | IE = 0.1 mA | 7 | - | - | V | ||
| Collector dark current | ICEO | VCE = 48 V | - | 0.01 | 0.1 | µA | ||
| Collector-to-emitter capacitance | CCE | V = 0 V, f = 1 MHz | - | 10 | - | pF | ||
| Current transfer ratio(CTR) | IC/IF | IF = 5 mA, VCE = 5 V | See the Current Transfer Ratios | % | ||||
| Saturated CTR | IC/IF(sat) | IF = 1 mA, VCE = 0.4 V | - | 60 | - | % | ||
| Rank GB | 30 | - | - | |||||
| Collector-to-emitter saturation voltage | VCE(sat) | IC = 2.4 mA, IF = 8 mA | - | - | 0.4 | V | ||
| IC = 0.2 mA, IF = 1 mA | - | 0.2 | - | |||||
| Rank GB | - | - | 0.4 | |||||
| Off-state collector current | IC(off) | VF = 0.7 V, VCE = 48 V | - | - | 10 | µA | ||
| Input-to-output stray capacitance | CS | VS = 0 V, f = 1 MHz | - | 0.8 | - | pF | ||
| Isolation resistance | RS | VS = 500 V, R.H. ≤ 60 % | 5 × 1010 | 1014 | - | Ω | ||
| Isolation voltage | BVS | AC, 1 min | 3750 | - | - | Vrms | ||
| Turn-on time | tON | RL = 1.9 kΩ, VCC = 5 V IF = 16 mA,(Figure 1) |
- | 2 | - | µs | ||
| Turn-off time | tOFF | - | 40 | - | ||||
- Ta = 25 °C