Low VF SBD (800mA or above) for Charger Circuits: CUS08F30, CUS10F30, CVJ10F30
We have developed small signal middle power type Schottky Barrier Diodes (SBD) (IO: 800 mA or above) that can support rises in charging current in mobile devices. This is a low forward voltage (low VF) type and low leak current SBD (50μA (max.) at VR = 30V), and is suitable for battery drive devices (which require low power consumption) in applications such as backflow prevention in the 500mA USB charger line for mobile phones.
Features
- Low forward voltage:
CUS08F30: 0.40V(typ.) @800mA - Low leakage current: 50μA(max) @VR=30V
- Lineup of two surface mount type packages
1. USC (SOD-323)
2. UFV (Thickness: 0.7mm(typ.))
Uses
- Backflow prevention in USB chargers
- Contrary connection prevention for chargers
- Low voltage rectification specification
Internal connection / Outline Drawing
- Internal connection
- Outline Drawing
Circuit Example
- Circuit example for mobile phone chargers
- Example of charger circuit contrary connection prevention (Shunt)
Main Specifications
| Rated
forward current IO |
Part number | Package | Forward voltage VF (V) |
Reverse current IR (μA) |
Total capacitance CT (pF) @VR=0, f=1MHz |
|||
|---|---|---|---|---|---|---|---|---|
| Typ. | Max | @IF (mA) |
Max | @VR (V) |
Typ. | |||
| 800mA | CUS08F30 | USC | 0.40 | 0.45 | 800 | 50 | 30 | 170 |
| 1A | CUS10F30 | USC | 0.43 | 0.5 | 1000 | 50 | 30 | 170 |
| CVJ10F30 | UFV | 0.47 | 0.56 | 1000 | 50 | 30 | 120 | |
